Kamath A, Patil T, Adari R, Bhattacharya I, Ganguly S, Aldhaheri RW, Hussain MA, Saha D (2012) Double-Channel AlGaN/GaN high Electron mobility transistor with Back barriers. Meng Q, Lin Q, Jing W, Han F, Zhao M, Jiang Z (2018) TCAD simulation for nonresonant terahertz detector based on Double-Channel GaN/AlGaN high-Electron-mobility transistor. Mizutani T, Yutaka O, Akita M, Kishimoto S, Maezawa K (2003) A study on current collapse in AlGaN/GaN HEMTs induced by Bias stress. Huang H, Liang YC, Member S, Samudra GS, Chang T-F, Huang C-F (2014) Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs.
0 Comments
Leave a Reply. |